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Philips Semiconductors
Octal Low Side Driver (OLSD)
THERMAL CHARACTERISTICS
Product speci?cation
TJA1010
SYMBOL
R th(j-amb)
R th(j-sp)
PARAMETER
from junction to ambient in free air
from junction to soldering point of ground pins
CONDITIONS
note 1
note 2
VALUE
55
17
UNIT
K/W
K/W
6 to 9 and 20 to 23
Notes
1. Printed on an FR-4 board with minimum foot print.
2. Power uniformly divided over all outputs.
CHARACTERISTICS
T j = ? 40 to +135 ° C; V DD = 11 to 13.5 V; V bat(max) = V DD + 1.5 V. All voltages are de?ned with respect to ground.
Positive currents ?ow into the IC. All parameters are guaranteed over the temperature range by design, but only 100%
tested at T amb = 25 ° C; unless otherwise speci?ed.
SYMBOL
I DD
V DD(UV)
V DD(0V)
V o(clamp)
I LO
PARAMETER
supply current
undervoltage shutdown threshold
overvoltage protection threshold
output clamp voltage
output leakage current
(one output)
CONDITIONS
I o = 0 mA; V STBY > 3 V
V STBY < 1 V; V DD = 13 V;
T j = ? 40 to +85 ° C
I o = 20 mA
off-state, V o = 13 V; standby
off-state, V o = 13 V;
MIN.
?
?
2
25
50
?
70
TYP.
?
?
?
?
60
?
MAX.
5
10
4.3
33
70
10
210
UNIT
mA
μ A
V
V
V
μ A
μ A
operational
off-state, V o = 1 V;
40
?
180
μ A
operational
I o(lim)
R o
output current limit (one output)
output resistance (one output)
on-state
I o = 0.2 A; V DD = 13 V;
T j = 135 ° C
I o = 0.2 A; V DD = 13 V;
T j = 25 ° C
I o = 0.1 A; V DD = 5.5 V;
0.3
?
?
?
?
?
?
?
0.55
3
2.5
10
A
?
?
?
see Fig.6
V ref
open load/short-circuit reference
note 1
1
?
1.9
V
voltage
δ I o / δ t
maximum rise and fall time of
V DD = 13 V; R L = 100 ? ;
?
?
100
mA/ μ s
output current
note 2
V IH
HIGH-level input voltage at pins
3
?
?
V
SI, SCL, SIE and STBY
V i(hys)
input voltage hysteresis at pins SI, note 2
0.2
?
1.2
V
SCL and SIE
V IL
LOW-level input voltage at pins
?
?
0.8
V
SI, SCL and SIE
V IL(STBY)
LOW-level input voltage at pin
?
?
1
V
STBY
2000 Dec 18
7
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